FYSS6405 Applied Semiconductor Physics (5 cr)

• Charge carriers in semiconductors

• energy band diagram, Fermi-level, density of states

• motion of charge carriers, drift and diffusion, thermal generation

• pn-junction and metal-semiconductor junction; bipolar transistor and its properties

• MOS capacitor

• MOS transistor and its properties

• CMOS technology and integrated circuits

• processing of IC components

• most important fabrication and characterization techniques 

At the end of this course, student will be able to

• name and explain the basic concepts of semiconductor physics, such as energy band model, types of charge carriers, carrier mobility, energy band gap and Fermi-level

• describe and apply pn and metal-semiconductor junction properties (rectifying) and calculate the electrical properties of these junctions from the properties of the corresponding materials (doping concentration etc.).

• describe and apply electrical properties of a metal-oxide-semiconductor (MOS) structure, based on metal-semiconductor junction

• calculate on this basis the electrical properties of a MOSFET transistor

• describe and explain the most important steps of CMOS processing and the most important processing techniques used

• describe and comment the current state of development of integrated circuit industry (Moore’s law), and assess the near-future trends and draw conclusions on the most critical developments  

FYSS6301 Electronics, part A