FYSS6405 Applied Semiconductor Physics (5 cr)

Study level:
Advanced studies
Grading scale:
0-5
Language:
English, Finnish
Responsible organisation:
Department of Physics
Curriculum periods:
2020-2021, 2021-2022, 2022-2023

Description

  • Charge carriers in semiconductors

  • energy band diagram, Fermi-level, density of states

  • motion of charge carriers, drift and diffusion, thermal generation

  • pn-junction and metal-semiconductor junction; bipolar transistor and its properties

  • MOS capacitor

  • MOS transistor and its properties

  • CMOS technology and integrated circuits

  • processing of IC components

  • most important fabrication and characterization techniques 

Learning outcomes

At the end of this course, student will be able to

  • name and explain the basic concepts of semiconductor physics, such as energy band model, types of charge carriers, carrier mobility, energy band gap and Fermi-level

  • describe and apply pn and metal-semiconductor junction properties (rectifying) and calculate the electrical properties of these junctions from the properties of the corresponding materials (doping concentration etc.).

  • describe and apply electrical properties of a metal-oxide-semiconductor (MOS) structure, based on metal-semiconductor junction

  • calculate on this basis the electrical properties of a MOSFET transistor

  • describe and explain the most important steps of CMOS processing and the most important processing techniques used

  • describe and comment the current state of development of integrated circuit industry (Moore’s law), and assess the near-future trends and draw conclusions on the most critical developments  

Description of prerequisites

FYSS6301 Electronics, part A 

Study materials

Lecture notes 

Literature

  • Chenming Calvin Hu, Modern Semiconductor Devices for Integrated Circuits, ISBN 978-0-13-608525-6; ISBN: 978-0-13-608525-6

Completion methods

Method 1

Description:
Given every two years.
Evaluation criteria:
At least half of maximum points required for passing, for example 80% exam and 20% exercises.
Time of teaching:
Period 2
Select all marked parts

Method 2

Description:
This completion method is intended for students for whom method 1 is not possible for specific reasons (e.g. language, living elsewhere). Contact the teacher before enrolling to the course via this completion method.
Evaluation criteria:
Exam 100%
Select all marked parts
Parts of the completion methods
x

Teaching (5 cr)

Type:
Participation in teaching
Grading scale:
0-5
Evaluation criteria:
At least half of maximum points required for passing, for example 80% exam and 20% exercises.
Language:
English, Finnish
Study methods:

Lectures, exercises, laboratory demos, exam.  

No published teaching
x

Independent study (5 cr)

Type:
Independent study
Grading scale:
0-5
Evaluation criteria:
Exam
Language:
English, Finnish
Study methods:

Self-study and exam. 

Teaching