FYSS6405 Applied Semiconductor Physics (5 cr)
Charge carriers in semiconductors
energy band diagram, Fermi-level, density of states
motion of charge carriers, drift and diffusion, thermal generation
pn-junction and metal-semiconductor junction; bipolar transistor and its properties
MOS transistor and its properties
CMOS technology and integrated circuits
processing of IC components
most important fabrication and characterization techniques
At the end of this course, student will be able to
name and explain the basic concepts of semiconductor physics, such as energy band model, types of charge carriers, carrier mobility, energy band gap and Fermi-level
describe and apply pn and metal-semiconductor junction properties (rectifying) and calculate the electrical properties of these junctions from the properties of the corresponding materials (doping concentration etc.).
describe and apply electrical properties of a metal-oxide-semiconductor (MOS) structure, based on metal-semiconductor junction
calculate on this basis the electrical properties of a MOSFET transistor
describe and explain the most important steps of CMOS processing and the most important processing techniques used
describe and comment the current state of development of integrated circuit industry (Moore’s law), and assess the near-future trends and draw conclusions on the most critical developments
Description of prerequisites
FYSS6301 Electronics, part A
- Chenming Calvin Hu, Modern Semiconductor Devices for Integrated Circuits, ISBN 978-0-13-608525-6; ISBN: 978-0-13-608525-6
Teaching (5 cr)
Lectures, exercises, laboratory demos, exam.
Independent study (5 cr)
Self-study and exam.